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PIE Daily Abbreviations

製程整合每天會用到的縮寫
共 14 個字
— 縮寫表 · 共 14 個字 —
PIEProcess Integration Engineer
字母分開念:P-I-E,有時念整個字「pie」· /piː aɪ iː/ or /paɪ/
製程整合工程師 — 跨部門看整體 device flow,所有 escalation 的協調者。
Lot is held — escalate to PIE for go/no-go.
FEOLFront-End-Of-Line
字母分開念,或念「fee-ol」· /ˈfiːɒl/
前段製程 — 從矽基板做到電晶體形成的階段(well、S/D、gate)。
FEOL mask count is fixed; only BEOL changing this revision.
BEOLBack-End-Of-Line
字母分開念,或念「bee-ol」· /ˈbiːɒl/
後段製程 — 金屬連線階段,M1 一路到頂層 metal。
BEOL stack has 12 metal layers in this 7nm flow.
MEOLMiddle-End-Of-Line
字母分開念· /ˈmiːɒl/
中段製程 — 電晶體跟金屬層之間的接觸層(contact、local interconnect)。
MEOL contact resistance shifted — investigate the silicide step.
ICInterconnect
字母分開念:I-C 或念整個字「interconnect」· /ɪntərkəˈnɛkt/
連線 — 金屬導線,把電晶體連起來形成電路。
Cu interconnect resistance is creeping up across runs.
ViaVia (Vertical Interconnect)
念整個字「vaɪə」· /ˈvaɪə/
通孔 — 金屬層之間的垂直連接洞,via fail 是 BEOL 主要 yield killer。
Via resistance ladder shows opens on M3-M4 transition.
CTContact (Transistor-to-Metal)
字母分開念:C-T,或念整個字「contact」· /ˈkɒntækt/
接觸 — 從矽電晶體拉到第一層金屬的洞。CT failed = 電晶體完全孤立。
CT resistance is 50% higher than POR.
BKMBest Known Method
字母分開念:B-K-M· /biː keɪ ɛm/
最佳方法 — 經驗證效果最好的配方,所有部門應遵循。
Use BKM recipe for this layer, no exceptions without PIE approval.
PORProcess of Record
字母分開念:P-O-R· /piː oʊ ɑːr/
標準製程 — 文件化的固定流程,跑生產的 default 配方。
Deviation from POR requires ECN sign-off.
DRDesign Rule
字母分開念:D-R· /diː ɑːr/
設計規則 — 給設計部門的「製程能畫出什麼線寬、什麼間距」的限制集。
DR check failed on M5 — line spacing under 80 nm.
ECNEngineering Change Notice
字母分開念:E-C-N· /iː siː ɛn/
工程變更通知 — 任何改 POR 都要走 ECN 簽核流程。
Pushing the ECN for new etcher chamber qualification.
RR / TRRecipe Release / Tool Release
字母分開念· /ɑːr ɑːr/ /tiː ɑːr/
配方放行 / 機台放行 — 新 recipe / 新機台正式進量產前的認證流程。
RR signed off; first lot starts tonight.
Y-SplitYield Split
念整個字「yield split」· /jiːld splɪt/
良率分組 — 同 lot 不同 wafer 跑不同條件,看哪個條件良率最好。
Run yield split on tilt angles 5°, 7°, 9° — find optimum.
Tape-outTape-out
念整個字「teɪp aʊt」· /teɪp aʊt/
下線 — 把設計檔案最終版交給 fab,準備量產的關鍵時點。
Tape-out delayed two weeks — need to finish DR check.
動詞搭配 · Verb Collocations · 共 8 條 —
pareto shows top contributorpareto + shows / identifies / ranks

Pareto 圖顯示 / 指認 / 排序貢獻因子。PIE 開 yield review 必出現的句子。

  • Pareto shows top contributor is M2 photo overlay — escalate to litho.
  • Pareto identifies three modules accounting for 80% of the yield loss.
run a yield splityield split + on [variable] / between [conditions]

做 yield split 實驗。一個 lot 拆 N 組,每組不同條件,看哪組良率最好。PIE 找最佳參數的主要工具。

  • Run a yield split on tilt angles 5°, 7°, 9° — find the optimum.
  • Yield split between BKM and proposed recipe shows 1.5% gain — pushing ECN.
BKM is locked / updatedBKM + is locked / updated / superseded / followed

BKM 被鎖定 / 更新 / 取代 / 遵循。PIE 簽完 BKM 後沒人能改,改要走 ECN。

  • BKM is locked for this layer — no recipe changes without PIE approval.
  • BKM was updated last quarter; old version archived in MES.
POR is deviated from / followedPOR + is deviated from / followed / amended

標準製程被偏離 / 遵循 / 修訂。Deviation from POR 是 PQA 的紅旗。

  • Lot deviated from POR by ±2 nm CD spec — requires PQA disposition.
  • POR was amended after the new mask set was qualified.
ECN is pushed / signed offECN + is pushed / signed off / pending / rejected

ECN 推進 / 簽核 / 待處理 / 駁回。改 POR 必走 ECN。

  • ECN-2026-114 is pushed for new etcher chamber qualification.
  • ECN signed off by PIE; first POR-updated lot scheduled tonight.
DR check passes / failsDR check + passes / fails / flags / clean

Design rule 檢查通過 / 失敗 / 標記 / 乾淨。Tape-out 前必過 DR check。

  • DR check failed on M5 line spacing — need to widen the spec.
  • DR check clean on the new device — ready for tape-out.
tape-out is slipped / on tracktape-out + is slipped / on track / delayed by [N]

下線延後 / 準時 / 延遲 N 週。Tape-out 一拖就影響整條 product roadmap。

  • Tape-out slipped two weeks — need to finish the DR fix-ups.
  • Tape-out on track for Q3 end if M5 layer release closes by Friday.
device flow is locked / updated / reviseddevice flow + is locked / updated / revised

Device 流程鎖定 / 更新 / 修訂。PIE 對整個 flow 的版本控管。

  • Device flow is locked for production — Revision E.
  • Device flow revised to remove the redundant cap implant — saves 1 mask.
句型 · Sentence Patterns · 共 5 條 —

yield pareto · PIE

Pareto on kpi: top contributor is factor at N%; second is factor2 at M%.

在 {KPI} 上的 Pareto:第一貢獻因子是 {因子} 占 {N}%;第二是 {因子 2} 占 {M}%。PIE Pareto 報告的標準句。

  • Pareto on M2 yield loss: top contributor is overlay excursion at 62%; second is CD bias drift at 18%.
  • Pareto on Vt variation: top contributor is RTA non-uniformity at 45%; second is halo dose drift at 22%.

yield split · PIE

Yield split result on variable: condition_a = yield_a%; condition_b = yield_b%; recommend action.

對 {變數} 的 yield split 結果:{條件 A} = {yield_a}%;{條件 B} = {yield_b}%;建議 {動作}。

  • Yield split result on tilt angle: 7° = 92%; 9° = 88%; recommend keeping 7° as POR.
  • Yield split result on RTA temperature: 1050°C = 94%; 1080°C = 91%; recommend tightening RTA window around 1050°C.

ECN summary · PIE

ECN id covers change; impact: scope; sign-off needed by role.

ECN {ID} 涵蓋 {變更};衝擊範圍 {範圍};需要 {角色} 簽核。PIE 推 ECN 的標準摘要。

  • ECN 2026-114 covers etcher chamber B qualification post-rebuild; impact: all etch layers on Product X; sign-off needed by Etch lead.
  • ECN 2026-203 covers new resist supplier qualification; impact: all critical photo layers; sign-off needed by Photo + PIE.

design rule check · PIE

DR check fail on feature: rule_violated; mitigation: fix (cost: N days, N masks).

{特徵} 上的 DR check 失敗:違反 {規則};緩解:{修法}(成本:{N} 天,{N} 道光罩)。

  • DR check fail on M5 line: spacing 75 nm vs 80 nm rule; mitigation: relax M5 spacing to 78 nm (cost: 5 days, 0 masks).
  • DR check fail on contact: density 40% vs 35% rule; mitigation: add dummy contact fill (cost: 2 days, 0 masks).

PIE disposition

Per PIE: action on scope; basis: evidence; effective date.

依 PIE 判定:對 {範圍} 採取 {動作};基於 {證據};生效 {日期}。

  • Per PIE: hold M2 photo on LITHO-07; basis: overlay excursion correlated with chamber B; effective immediately.
  • Per PIE: release lots Q3-218 ~ Q3-221; basis: WAT and PCM data within spec post-investigation; effective tonight.
真實場景 · Real Scenarios · 共 3 條 —

Email — Tape-out Status Update

PIE 主管週五發給 R&D 跟 product team 的 tape-out 進度更新。

Subject: [STATUS] Product X 7nm tape-out — week 12 update

Hi all,

Quick recap of tape-out status this week:

Current target: Q3 end.

Critical path items:
1. M5 layer DR fix-ups — DRC clean, layout team finalizing this weekend. Closes by Monday.
2. BEOL stack revision E — ECN signed off Wednesday. POR updated in MES.
3. New low-k dielectric qualification — RR pending; thin film team running monitor wafers through next Tuesday.

Risks:
- M5 metal CMP recipe still showing dishing 35 nm vs 30 nm target. CMP team is tuning the downforce; one more iteration this week.
- EUV reticle delivery for the contact layer slipped 4 days due to mask shop yield. Recovery plan in place; doesn't impact tape-out date if BEOL closes by Monday.

Will share final go/no-go decision in the staff meeting Thursday.

Thanks,
PIE

相關縮寫:tape-out · DR · ECN · POR · RR · BKM

Conf Call — Yield Pareto Review

Yield review,PIE 主持,展示週度 Pareto 並點名各部門。

Thanks everyone. Let's go through this week's yield pareto.

We came in at 86.5% on Product X, 4.5% below the running average of 91%. Three modules account for ~80% of the loss.

First contributor — 62% of the loss — is the M2 photo overlay excursion on LITHO-07. Litho team has the root cause (chuck thermal drift); recipe re-cal'd Tuesday. Need a confirmation lot before Friday to clear the SPC alarm.

Second — 18% of the loss — is CD bias drift on the M3 etch step, chamber A. Etch team confirmed the chamber A impedance match drift; corrected after PM. Monitor SPC for the next 48 hours.

Third — small contributor, 5% — is post-CMP residue on the M2 metal layer. Cleaner megasonic power dropped after a flow controller drift; CMP corrected it last shift.

Action items:
- Litho confirmation lot by Friday EOD.
- Etch SPC update by Monday morning.
- CMP cleaner stability monitored for the next 2 days.

Re-pareto next week to validate the recovery.

OK, going to detailed data — Litho team, you're up.

相關縮寫:pareto · overlay · CD · SPC · PM

ECN Summary — New Etcher Chamber Qualification

PIE 推給變更管理委員會的 ECN summary,新蝕刻 chamber 認證。

ECN 2026-114 — Qualify Etch Chamber B Post-Rebuild

Change Summary
- Scope: Etch tool E2 chamber B post electrode rebuild on 03/01.
- Affected layers: M2 trench, M3 contact, V3 via.
- Recipe versions: E2-M2-RIE v3.2, E2-M3-CT v2.5, E2-V3-VIA v1.8 (unchanged; recipe-as-is qualification).

Justification
Chamber B was offline for 6 weeks for electrode rebuild after the impedance match failure on 01/15. Following rebuild, the chamber must be re-qualified before returning to production.

Qualification Plan
- 10 monitor wafers per recipe across the 3 affected layers (30 wafers total).
- KPIs: CD bias within ±1 nm of chamber A baseline; profile angle 89° ±1°; particle adder count < 10; EPD signal-to-noise > 5.
- Sign-off: Etch lead (technical), PIE (integration), PQA (production release).

Risk Assessment
Low. Recipes unchanged; mechanical rebuild only. Chamber matching to chamber A is the main risk; mitigated by 100% monitor wafer screening for the first 2 weeks of production.

Schedule
- Qualification wafers run: 03/15 ~ 03/18.
- Data review: 03/19.
- Production release: 03/20 (assuming all KPIs hit).

Sign-off needed by: Etch lead, PIE, PQA (this ECN).

相關縮寫:ECN · POR · BKM · PIE · PQA · RR

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