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Assembly Daily Abbreviations

封裝每天會用到的縮寫
共 13 個字
— 縮寫表 · 共 13 個字 —
PackagePackage (Final IC Form)
念整個字「ˈpækɪdʒ」· /ˈpækɪdʒ/
封裝 — die 進塑膠殼之後的最終形態,有 pin 可上 PCB。
We're switching this product to a smaller package for mobile.
OSATOutsourced Semiconductor Assembly and Test
念整個字「ˈoʊsæt」· /ˈoʊsæt/
委外封裝測試廠 — 不是 wafer fab,專做封裝測試。日月光、矽品、Amkor。
Send these wafers to OSAT after wafer probe.
DicingWafer Dicing
念整個字「ˈdaɪsɪŋ」· /ˈdaɪsɪŋ/
切晶 — 用鋸片或雷射把 wafer 切成一顆顆 die。
Dicing kerf width is 50 microns on this product.
DADie Attach
字母分開念:D-A,或念整個字「die attach」· /diː əˈtætʃ/
黏晶 — 把 die 用銀膠或共晶焊料黏到 lead frame / substrate。
DA void exceeds 5% — push out for X-ray inspection.
WBWire Bond
字母分開念:W-B,或念整個字「wire bond」· /waɪər bɒnd/
打線 — 用細金線或銅線從 die pad 連到 lead frame 的方式。便宜成熟。
Wire bond pull test fails on lot #218 — pad surface issue.
FCFlip Chip
字母分開念:F-C,或念整個字「flip chip」· /flɪp tʃɪp/
覆晶 — die 翻過來用錫球直接焊到 substrate,高 I/O 高速 chip 必選。
FC bump shear strength below 30 grams — rework.
BGABall Grid Array
字母分開念:B-G-A· /biː dʒiː eɪ/
球柵陣列封裝 — 底部排錫球的封裝形式,CPU / GPU 主流。
Drop test on BGA balls — 100 cycles with no failures.
QFNQuad Flat No-leads
字母分開念:Q-F-N· /kjuː ɛf ɛn/
方形扁平無接腳封裝 — 小尺寸 IC 主流,薄、便宜。
QFN thermal pad must be 100% solder coverage.
Lead FrameLead Frame
念整個字「liːd freɪm」· /liːd freɪm/
導線架 — wire bond 封裝的底座金屬框架,連到 IC 的 pin。
Lead frame contamination caused wire bond fails.
Solder BallSolder Ball / Bump
念整個字「ˈsɒldər bɔːl」· /ˈsɒldər bɔːl/
錫球 — flip chip / BGA 上的小金屬球,做電連接。
Solder ball co-planarity must be within 50 microns.
UnderfillUnderfill
念整個字「ˈʌndərfɪl」· /ˈʌndərfɪl/
底膠 — flip chip 下方填的膠,均勻熱應力分布。
Underfill voids over 1% trigger reliability fail.
MoldMold Compound
念整個字「moʊld」· /moʊld/
封裝塑料 — 灌進去做最後外殼保護的塑膠。
Mold delamination on package corners — adhesion issue.
EpoxyEpoxy (Die Attach Material)
念整個字「ˈɛpəksi」· /ˈɛpəksi/
環氧樹脂 — die attach 用的銀膠主要成分。
Curing the epoxy at 175°C for 30 min.
動詞搭配 · Verb Collocations · 共 8 條 —
wire bond pull strength fails / passeswire bond / WB + pull strength + fails / passes / drops

打線拉力測試失敗 / 通過 / 下降。Pull strength 是打線品質的關鍵驗收項目。

  • Wire bond pull strength fails on lot #218 — pad surface contamination suspect.
  • WB pull strength passes consistently at >8 grams across all wires.
ball shear strength fails / passesball shear / bump shear + strength + fails / passes

錫球剪切強度失敗 / 通過。Ball shear 是 BGA 跟 flip chip 的關鍵 reliability 驗收。

  • Bump shear strength fails below 30 grams — rework required.
  • Ball shear passes at 45 grams — well above 35 grams spec.
void is found / acceptable / exceededvoid + is found / acceptable / exceeded / mitigated

空洞被找到 / 在規格內 / 超標 / 緩解。Void 在 die attach 或 underfill 都是 reliability 風險。

  • Voids found in die attach exceeded 5% — pull lot for X-ray inspection.
  • Underfill voids acceptable at <1% across all units inspected.
mold delaminates / cracksmold compound + delaminates / cracks / discolors

封裝塑料剝離 / 裂開 / 變色。Mold delamination 是封裝 reliability 紅燈。

  • Mold delaminates at package corners after temperature cycling.
  • Mold cracks observed on the larger BGA after JEDEC level 3 test.
die cracks / chipsdie + cracks / chips / breaks during

Die 龜裂 / 缺角。常發生在 dicing 或 die attach 階段。

  • Die cracks observed during dicing — saw blade wear suspect.
  • Die chipped at corners during pick-and-place — collet alignment off.
solder ball is missing / oxidizedsolder ball + is missing / oxidized / coplanar

錫球缺失 / 氧化 / 共平面。Missing ball 是 BGA 致命缺陷。

  • Solder ball missing on 12 units of lot Q3-218 — rework or scrap.
  • Solder balls oxidized after a stocking period exceeded 6 months.
package coplanarity is within / exceedscoplanarity + is within / exceeds spec / fails

封裝共平面度在 / 超出 spec / 失敗。BGA 共平面性是 SMT 上板的關鍵。

  • Solder ball coplanarity is within 50 microns spec.
  • Coplanarity exceeds spec on the wide BGA — likely substrate warpage.
wafers ship / hand off / arrive at OSATwafers + ship / hand off / arrive at OSAT

Wafer 出貨 / 交接 / 抵達 OSAT。Wafer fab 跟封測廠的介面。

  • Wafers ship to OSAT after wafer probe — Friday shipment confirmed.
  • Wafers arrived at OSAT yesterday; assembly start Monday.
句型 · Sentence Patterns · 共 5 條 —

wire bond failure report

Wire bond failure on scope: failure_mode at N% rate; root cause: cause.

{範圍} 的打線失敗:{失效模式} 比例 {N}%;根因:{cause}。打線異常標準報告句。

  • Wire bond failure on lot Q3-218: pull strength below 6 grams at 12% rate; root cause: pad oxidation from extended storage.
  • Wire bond failure on lot 1842: lifted wires at 3% rate; root cause: bond stage temperature drift on machine WB-04.

JEDEC qual report

Package package_type JEDEC level level qualification: result; failure_count failures observed.

{封裝類型} JEDEC 等級 {等級} 認證:{結果};觀察到 {failure_count} 個失效。

  • Package BGA-484 JEDEC level 3 qualification: passed; 0 failures observed across 100 units.
  • Package QFN-32 JEDEC level 2 qualification: failed; 3 mold cracks observed across 100 units.

X-ray void inspection

X-ray inspection on scope: void_pct% voids; action per spec spec.

{範圍} 的 X-ray 檢查:{void_pct}% 空洞;依規格 {spec} {動作}。

  • X-ray inspection on lot Q3-218 die attach: 6.2% voids; reject per spec <5% maximum.
  • X-ray inspection on lot 1842 underfill: 0.8% voids; accept per spec <2% maximum.

reliability flag · assembly

Reliability concern on package due to issue; recommend action pending test.

{封裝} 因 {問題} 出現 reliability 疑慮;建議 {動作},等待 {測試}。

  • Reliability concern on BGA-484 due to underfill voids; recommend extended TC test pending qual report.
  • Reliability concern on QFN-32 due to mold delamination at package corners; recommend hold pending JEDEC requal.

OSAT status update

Per OSAT update: lot_id status is status; expected next_step on date.

依 OSAT 更新:{批號} 狀態為 {狀態};預期 {下一步} 於 {日期}。

  • Per OSAT update: lot Q3-218 status is in die attach; expected wire bond start on 03/14.
  • Per OSAT update: lot 1842 status is in final test; expected ship-out on 03/16.
真實場景 · Real Scenarios · 共 3 條 —

Email — Wire Bond Pull Failure

Assembly OSAT 工程師發給 wafer fab 跟 PIE,wire bond 拉力測試失敗。

Subject: [HOLD] Wire bond pull failure on lot Q3-218 — pad oxidation suspect

Hi all,

Heads up — Wire bond pull strength on lot Q3-218 failed acceptance criteria during in-line monitoring at our OSAT site.

Symptom:
- Pull strength on 12 wires from a sampling of 100 units measured 4.5–6.0 grams.
- Acceptance spec is >7 grams.
- Failure mode: cratering (pull at pad-to-die interface).

Initial investigation:
- Wafers from this lot were stored at OSAT for 4 months before assembly.
- Wafer-side AlSi pad surface inspection shows visible oxidation under SEM.
- Storage humidity log shows two excursions above 60% RH during the storage window.

Containment:
- Lot Q3-218 held at WB step.
- Remaining wafers from same lot pulled for pad surface inspection.
- All units already wire-bonded (60 units) pending pull test on every wire.

Request:
- Wafer fab side: confirm pad metallization spec — was AlSi or AlSiCu used? AlSi without Cu is more oxidation-prone.
- Storage SOP at OSAT: review humidity control on the affected storage cabinet.

Will share update by tomorrow EOD.

Thanks,
OSAT Assembly

相關縮寫:WB · OSAT · SEM · SOP

Conf Call — JEDEC Qualification Update

Package qual review,封裝部門 lead 報告 Product X BGA 的 JEDEC 認證結果。

Thanks. Quick update on Product X BGA-484 JEDEC qualification.

Current status: 80% complete. Three sub-tests done, two pending.

Done:
- MSL Level 3 (Moisture Sensitivity): passed. 100 units, 0 failures after 168h conditioning + 3x reflow.
- TC Pre-conditioning (260°C reflow): passed.
- UHAST 96h: passed. 0 electrical failures, 0 visible delamination.

Pending:
- TC 1000 cycles: 60% complete (600 cycles). Initial results clean — 0 failures so far. Target completion next Friday.
- HTOL 1000h: 30% complete (300 hours). 0 failures so far. Target completion in 3 weeks.

Risks:
- TC trending fine but one unit showing a marginal underfill void increase. We're watching closely; if void grows we may have a failure mode in the last 400 cycles.
- HTOL: too early to call, but no anomalies in the first 300 hours.

Customer ship date: assuming all tests close clean by mid-April, ship on plan.

PQA team is on the email distribution; let me know if anyone wants to deep-dive on a sub-test.

Open to questions.

相關縮寫:BGA · MSL · TC · UHAST · HTOL · PQA

Deviation Report — Mold Delamination

JEDEC 試驗中 mold delamination 失效的 deviation report Section 4。

4.0 Root Cause Analysis — Mold Delamination on BGA-484

4.1 Symptom
During the BGA-484 JEDEC Level 3 qualification, 3 of 100 units showed mold delamination at the package corners after the 3rd reflow cycle. C-SAM (Acoustic Scanning) imaging confirms delamination extending 1.5–2.5 mm from each corner.

4.2 Investigation Path
- Cross-section on a failing unit shows clean interface between mold and substrate solder mask, no contamination.
- Mold lot traceability: all 3 failing units used mold compound batch #2026-114.
- Compound batch #2026-114 inspection: moisture absorption pre-cure recorded at 0.4%, vs spec <0.3%. Storage area dehumidifier alarm log shows a 6-hour humidity excursion on 02/28.
- Other batches of the same mold compound: 0 delamination in 200 units tested.

4.3 Root Cause Statement
The mold delamination is attributed to elevated moisture absorption in mold compound batch #2026-114 due to a 6-hour humidity excursion during pre-cure storage, leading to vapor pressure expansion during MSL reflow cycles. Confirmed by C-SAM imaging, batch traceability, and storage log review.

4.4 Containment
- Mold compound batch #2026-114 quarantined; remaining 80 kg removed from production floor.
- All BGA packages produced from this batch (240 units) re-tested with C-SAM; 12 additional delamination defects found, all scrapped.
- Storage area dehumidifier alarm threshold tightened from 50% RH to 45% RH.

4.5 Long-Term Action
- Pre-cure moisture content check added to incoming mold compound QC, every batch.
- Storage humidity logged continuously, with auto-quarantine if any 1-hour reading exceeds 50% RH.
- FMEA updated to include "mold compound moisture excursion → reflow delamination" as a high-severity failure mode.

相關縮寫:BGA · MSL · C-SAM · QC · FMEA

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